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Growth of ultrathin ZrO2 films on Si(100): film-thickness-dependent band alignment
Vise andre og tillknytning
2007 (engelsk)Inngår i: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 88, nr 13, artikkel-id 132905Artikkel i tidsskrift (Fagfellevurdert) Published
Abstract [en]

The band alignment of ultrathin ZrO2 films of different thickness formed on Si(100) have been monitored with synchrotron radiation photoelectron spectroscopy and x-ray absorption spectroscopy. The films were deposited sequentially by way of metal-organic chemical-vapor deposition in ultrahigh vacuum. A significant decrease in the conduction band offset is found for increasing film thickness. It is accompanied by a corresponding increase of the valence band offset. The variations originate in the formation of an interfacial layer characterized by a lower degree of Zr-O interaction than in bulk ZrO2 but with no clear evidence for partially occupied Zr 4d dangling bonds.

sted, utgiver, år, opplag, sider
American Institute of Physics , 2007. Vol. 88, nr 13, artikkel-id 132905
Emneord [en]
metal oxides, ZrO2, band offset
HSV kategori
Identifikatorer
URN: urn:nbn:se:du-2699DOI: 10.1063/1.2190073OAI: oai:dalea.du.se:2699DiVA, id: diva2:519813
Tilgjengelig fra: 2007-04-05 Laget: 2007-04-05 Sist oppdatert: 2017-12-07bibliografisk kontrollert

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