This thesis explores various methods of characterizations for mono crystalline silicon solar cells. Within this study, known analysis techniques have been utilized to characterize solar cell efficiency and the effect of certain processing steps on the resulting cells. Specifically, the importance of IU curve measurements, Werner plots of resistance, and internal quantum efficiency are evaluated, and various optimizations schemas are investigated. This study therefore works to further the goals of device efficiency maximization, and device parameter analysis; the eventual goal being the optimization of the fabrication peocess and characterization of the behaviour of the new diffusion furnace at IPE (University of Stuttgart). Additionally, using a simulation program (IQET) emitter thickness was determined for various samples, based on the internal quantum efficiency. These results than provide a greater understanding of the importance of the emitter thickness, and the necessary steps to optimize this thickness. From internal quantum efficiency, diffusion length is also determined, leading to a greater understanding of our capabilities and limitations in producing higher efficiency solar cells.