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ToF-SIMS depth profiling of (Ga,Mn)As capped with amorphous arsenic: effects of annealing time
Dalarna University, School of Technology and Business Studies, Material Science.
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2006 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 252, no 19, p. 7252-7254Article in journal (Refereed) Published
Abstract [en]

The influence of annealing time on an amorphous As cap layer and the depth distribution of Mn atoms have been investigated. The results show that a 1600 Å thick As cap layer is completely desorbed after 3 h of annealing time. The depth distributions of Mn indicate that interstitial Mn atoms have diffused to the outer surface and being passivated. The thickness of the Mn passivation layer was around 90 Å.

Place, publisher, year, edition, pages
2006. Vol. 252, no 19, p. 7252-7254
Keywords [en]
ToF-SIMS; depth profiling; (Ga, Mn)As; As cap; Mn diffusion
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:du-2685DOI: 10.1016/j.apsusc.2006.02.167ISI: 000240609900199OAI: oai:dalea.du.se:2685DiVA, id: diva2:519805
Available from: 2007-04-04 Created: 2007-04-04 Last updated: 2017-12-07Bibliographically approved

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